Trapped-Ion Quantum Logic with Global Radiation Fields

Citation:

S Weidt, J Randall, SC Webster, K Lake, AE Webb, I Cohen, T Navickas, B Lekitsch, A Retzker, and WK Hensinger. 11/23/2016. “Trapped-Ion Quantum Logic with Global Radiation Fields.” Physical Review Letters, 117, 22. Publisher's Version

Abstract:

Trapped ions are a promising tool for building a large-scale quantum computer. However, the number of required radiation fields for the realization of quantum gates in any proposed ion-based architecture scales with the number of ions within the quantum computer, posing a major obstacle when imagining a device with millions of ions. Here, we present a fundamentally different approach for trapped-ion quantum computing where this detrimental scaling vanishes. The method is based on individually controlled voltages applied to each logic gate location to facilitate the actual gate operation analogous to a traditional transistor architecture within a classical computer processor. To demonstrate the key principle of this approach we implement a versatile quantum gate method based on long-wavelength radiation and use this method to generate a maximally entangled state of two quantum engineered clock qubits with fidelity 0.985(12). This quantum gate also constitutes a simple-to-implement tool for quantum metrology, sensing, and simulation.
See also: 2016
Last updated on 07/04/2021